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| SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 (Max) @VGS = 10V Qg(typ) = 12nC H G F F KF5N50D/DZ N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RATING 500 30 4.3 2.7 13 270 8.6 20 59.5 0.48 150 -55 150 mJ mJ V/ns W W/ A UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE DPAK (1) Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.1 110 /W /W PIN CONNECTION (KF5N50D) D (KF5N50DZ) D G G S S 2008. 12. 3 Revision No : 1 1/6 KF5N50D/DZ ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance A BVDSS BVDSS/A IDSS Vth IGSS RDS(ON) Tj ID=250E ID=250E , VGS=0V , Referenced to 25E 500 2.0 30V, VDS=0V 25V, VDS=0V 0.55 3/4 3/4 1.10 10 E V nA E U 4.0 100 10 1.4 V V/E VDS=500V, VGS=0V, VDS=VGS, ID=250E KF5N50D KF5N50DZ VGS=3/4 VGS=3/4 VGS=10V, ID=2.5A Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS VDS=25V, VGS=0V, f=1.0MHz Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 5A, dI/dt 100A/ , VDD 300 BVDSS, Starting Tj=25 , Duty Cycle 2%. . Note 4) Pulse Test : Pulse width Note 5) Essentially independent of operating temperature. Marking 1 1 KF5N50 801 D 2 KF5N50 801 DZ 2 1 PRODUCT NAME 2 LOT NO 2008. 12. 3 Revision No : 1 2/6 KF5N50D/DZ Fig1. ID - VDS 100 VDS=30V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) VGS=10V 10 1 10 VGS=7V TC=100 C 1 VGS=5V 10 0 25 C 0.1 0.1 1 10 100 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 VGS = 0V IDS = 250 Fig4. RDS(ON) - ID 3.0 On - Resistance RDS(ON) () 2.5 2.0 1.5 VGS=10V VGS=6V 1.1 1.0 1.0 0.5 0 0 0.9 0.8 -100 -50 0 50 100 150 2 4 6 8 10 12 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 10 2 Fig6. RDS(ON) - Tj 3.0 VGS =10V IDS = 2.5A Reverse Drain Current IS (A) Normalized On Resistance 2.5 2.0 1.5 1.0 0.5 10 1 TC=100 C 25 C 10 0 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2008. 12. 3 Revision No : 1 3/6 KF5N50D/DZ Fig 7. C - VDS 1000 12 ID=5A Fig8. Qg- VGS Gate - Source Voltage VGS (V) Ciss 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 VDS = 400V VDS = 250V VDS = 100V Capacitance (pF) 100 Coss 10 Crss 1 0 5 10 15 20 25 30 35 40 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Operation in this Fig10. ID - Tj 6 5 (KF5N50D, KF5N50DZ) area is limited by RDS(ON) 10s 100s Drain Current ID (A) 101 Drain Current ID (A) 4 3 2 1 0 0 25 50 75 100 125 150 100 1ms 10ms 10-1 Tc= 25 C Tj = 150 C 2 Single pulse 100ms DC 10 0 10 10 1 102 103 Drain - Source Voltage VDS (V) Junction Temperature Tj ( C) Fig11. Transient Thermal Response Curve Transient Thermal Resistance Duty=0.5 100 0.2 0.1 0.05 10-1 0.02 0.01 ls Pu e PDM t1 t2 gle Sin 10-2 10-5 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2008. 12. 3 Revision No : 1 4/6 KF5N50D/DZ Fig12. Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS Fig13. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp Fig14. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS VGS 10% td(on) ton tr td(off) tf toff 2008. 12. 3 Revision No : 1 5/6 KF5N50D/DZ Fig15. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.5 VDSS driver VDS (DUT) Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2008. 12. 3 Revision No : 1 6/6 |
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